CN8541

85 Electrical Machinery and Equipment and Parts Thereof, Sound Recorders and Reproducers, Television Image and Sound Recorders and Reproducers, and Parts and Accessories of Such Articles

8541 (01/1988-..) Diodes, Transistors and Similar Semiconductor Devices, Photosensitive Semiconductor Devices, Incl. Photovoltaic Cells Whether or not Assembled in Modules or Made up Into Panels (Excl. Photovotaic Generators), Light Emitting Diodes, Mounted PiezoelectricCrystals, Parts Thereof

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85411000 (01/1999-..) Diodes (Excl. Photosensitive or Light Emitting Diodes)

85411010 (01/1988-12/1998) Diodes Other Than Photosensitive or Light Emitting Diodes in Wafers not yet cut Into Chips

85411091 (01/1988-12/1998) Power Rectifier Diodes (Excl. Diodes in Wafers not yet cut Into Chips)

85411099 (01/1988-12/1998) Diodes Other Than Photosensitive or Light Emitting Diodes (Excl. Diodes in Wafers not yet cut Into Chips and Power Rectifier Diodes)

85412100 (01/1999-..) Transistors With a Dissipation Rate < 1 w (Excl. Photosensitive Transistors)

85412110 (01/1988-12/1998) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate < 1 w, in Wafers not yet cut Into Chips

85412190 (01/1988-12/1998) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate < 1 w (Excl. Those in Wafers not yet cut Into Chips)

85412900 (01/1999-..) Transistors With a Dissipation Rate >= 1 w (Excl. Photosensitive Transistors)

85412910 (01/1988-12/1998) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate >= 1 w, in Wafers not yet cut Into Chips

85412920 (01/1995-12/1998) Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More

85412930 (01/1995-12/1998) Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More

85412980 (01/1995-12/1998) Transistors (Excl. Photosensitive Transistors) With a Dissipation Rate of 1 w or More (Excl. Those in Wafer Form, not yet cut Into Chips, Power mos Field Effective Transistors and Insulated Gate Bipolar Transistors Igbts))

85412990 (01/1988-12/1994) Transistors Other Than Photosensitive Transistors, With a Dissipation Rate >= 1 w (Excl. Those in Wafers not yet cut Into Chips)

85413000 (01/1999-..) Thyristors, Diacs and Triacs (Excl. Photosensitive Semiconductor Devices)

85413010 (01/1988-12/1998) Thyristors, Diacs and Triacs, in Wafers not yet cut Into Chips (Excl. Photosensitive Semiconductor Devices)

85413090 (01/1988-12/1998) Thyristors, Diacs and Triacs (Excl. Those in Wafers not yet cut Into Chips and Photosensitive Semiconductor Devices)

85414010 (01/1999-..) Light-emitting Diodes, Incl. Laser Diodes

85414011 (01/1995-12/1998) Laser Diodes

85414019 (01/1995-12/1998) Light-emitting Diodes (Excl. Laser Diodes)

85414090 (01/1999-..) Photosensitive Semiconductor Devices, Incl. Photovoltaic Cells

85414091 (01/1988-12/1998) Solar Cells Whether or not Assembled in Modules or Made up Into Panels (Excl. Photovoltaic Generators)

85414093 (01/1988-12/1998) Photodiodes, Phototransistors, Photothyristors or Photocouples (Excl. Solar Cells)

85414099 (01/1988-12/1998) Photosensitive Semiconductor Devices (Excl. Photodiodes, Phototransistors, Photothyristors, Photocouples and Solar Cells)

85415000 (01/1999-..) Semiconductor Devices, N.e.s.

85415010 (01/1988-12/1998) Semiconductor Devices N.e.s., in Wafers not yet cut Into Chips

85415090 (01/1988-12/1998) Semiconductor Devices N.e.s.

85416000 (01/1988-..) Mounted Piezoelectric Crystals

85419000 (01/1988-..) Parts of Diodes, Transistors and Similar Semiconductor Devices, Photosensitive Semiconductor Devices, Light Emitting Diodes and Mounted Piezoelectric Crystals, N.e.s.