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85412930 (01/1995-12/1998) Insulated gate bipolar transistors (IGBTs) with a dissipation rate of 1 W or more

Source: Eurostat, Luxembourg

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	Series	Description	Direct Link
	[cn85412920.000EP0001]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: France / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A
	[cn85412920.000EP0002]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: Belgium/ Luxembourg / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A
	[cn85412920.000EP0003]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: Netherlands / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A
	[cn85412920.000EP0004]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: Germany / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A
	[cn85412920.000EP0005]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: Italy / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A
	[cn85412920.000EP0006]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: United Kingdom / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A
	[cn85412920.000EP0007]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: Ireland / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A
	[cn85412920.000EP0008]	CN 85412920 / Exports / Unit = Prices (Euro/ ton) / Partner: Denmark / Reporter: Eur27 /85412920:Power mos Field Effective Transistors With a Dissipation Rate of 1 w or More	A