85412980 (01/1995-12/1998) Transistors (excl. photosensitive transistors) with a dissipation rate of 1 W or more (excl. those in wafer form, not yet cut into chips, power MOS field effective transistors and insulated gate bipolar transistors IGBTs))

Source: Eurostat, Luxembourg

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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: France / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: Belgium/ Luxembourg / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: Netherlands / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: Germany / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: Italy / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: United Kingdom / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: Ireland / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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CN 85412930 / Exports / Unit = Prices (Euro/ ton) / Partner: Denmark / Reporter: Eur27 /85412930:Insulated Gate Bipolar Transistors (Igbts) With a Dissipation Rate of 1 w or More
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